• DocumentCode
    2764618
  • Title

    Strained and Relaxed SiGe for High-Mobility MOSFETs

  • Author

    Lee, Minjoo Larry ; Antoniadis, Dimitri A. ; Fitzgerald, E.A.

  • Author_Institution
    MIT, Cambridge, MA
  • fYear
    2006
  • fDate
    15-17 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this talk, the authors first review the earlier results on high-mobility, biaxially strained Si, SiGe, and Ge channels grown on relaxed Si1-xGex/Si(001) buffers. Next, they discuss their experiments with SiGe growth on Si(110) and (111), with a particular emphasis on the unique dislocation morphologies that emerge. The author will also show that the growth kinetics and dislocation behavior on (110) and (111) have significance for SiGe source/drain technology
  • Keywords
    Ge-Si alloys; MOSFET; dislocation structure; elemental semiconductors; germanium; semiconductor growth; silicon; SiGe; SiGe growth; dislocation behavior; dislocation morphologies; growth kinetics; high-mobility MOSFET; relaxed SiGe; source/drain technology; strained SiGe; Capacitive sensors; Charge carrier processes; Electron mobility; Germanium silicon alloys; Kinetic theory; MOSFETs; Semiconductor films; Silicon germanium; Substrates; Surface morphology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    1-4244-0461-4
  • Type

    conf

  • DOI
    10.1109/ISTDM.2006.246514
  • Filename
    1716008
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2764618