Threshold voltage shift caused by copper contamination

Author

Vermeire, B. ; Peterson, C.A. ; Parks, H.G. ; Sarid, D.

Author_Institution

Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA

fYear

1999

fDate

1999

Firstpage

315

Lastpage

318

Abstract

High resolution Fowler-Nordheim field emission mapping, a relatively new technique that makes use of an atomic force microscope with a conducting tip (Ruskell et al., 1996), of thin thermal SiO₂ layers was used to investigate the yield and reliability implications of transistor scaling when trace amounts of copper contamination are present on the silicon surface prior to gate oxidation. A new failure mechanism is revealed that will start to manifest itself in 0.13 μm technologies

Keywords

atomic force microscopy; copper; dielectric thin films; integrated circuit reliability; integrated circuit yield; oxidation; silicon compounds; surface contamination; 0.13 micron; Fowler-Nordheim field emission mapping; IC reliability; IC yield; SiO₂:Cu-Si; atomic force microscope; conducting tip; copper contamination; failure mechanism; gate oxidation; silicon surface; thin thermal SiO₂ layers; threshold voltage shift; trace copper contamination; transistor scaling; Atomic force microscopy; Atomic layer deposition; Copper; Failure analysis; Oxidation; Silicon; Surface contamination; Thermal conductivity; Thermal force; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International

Conference_Location

San Diego, CA

Print_ISBN

0-7803-5220-3

Type

conf

DOI

10.1109/RELPHY.1999.761632

Filename

761632