Title :
High Density Planes Deposition Kinetics and Facets Propagation in Silicon Selective Epitaxial Growth
Author :
Loubet, N. ; Talbot, A. ; Dutartre, D.
Author_Institution :
STMicroelectronics, Crolles
Abstract :
In this paper, we are investigating the silicon growth on such profiles resulting from the vapour phase HCl treatment. Facet apparition and kinetics are investigated as a function of the temperature and initial surface morphology
Keywords :
elemental semiconductors; epitaxial growth; reaction kinetics; semiconductor growth; silicon; surface morphology; surface treatment; HCl; Si; facet apparition; facet kinetics; facets propagation; high density plane deposition kinetics; silicon selective epitaxial growth; surface morphology; vapour phase HCl treatment; Chemical vapor deposition; Chemistry; Epitaxial growth; Etching; Germanium silicon alloys; Hydrogen; Kinetic theory; Morphology; Silicon germanium; Temperature;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246519
