DocumentCode :
2764771
Title :
Filler induced metal crush failure mechanism in plastic encapsulated devices
Author :
Yalamanchili, Prasad ; Baltazar, Vhel
Author_Institution :
Analog Devices Inc., Santa Clara, CA, USA
fYear :
1999
fDate :
1999
Firstpage :
341
Lastpage :
346
Abstract :
Filler particles from the mold compound can give rise to local stress on the integrated circuit die surface, cracking the passivation, resulting in a metal to polysilicon short or a metal to metal short. The metal damage under the passivation is termed as metal crush. This study shows that metal crush takes place only in plastic encapsulated devices and is predominant in plastic packages with silicone gel die overcoat. Experiments and finite element simulations have shown that the use of ultra low stress molding compound without silicone gel die overcoat eliminates metal crush failures. This study also presents the minimum silicone gel die overcoat thickness that prevents metal crush failures in plastic encapsulated devices with low stress molding compound and silicone gel die overcoat
Keywords :
cracks; failure analysis; filled polymers; finite element analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit packaging; integrated circuit reliability; integrated circuit testing; internal stresses; moulding; passivation; plastic packaging; filler induced metal crush failure mechanism; filler particles; finite element simulations; integrated circuit die surface; local stress; low stress molding compound; metal crush damage; metal crush failures; metal damage; metal to metal short; metal to polysilicon short; mold compound; passivation; passivation cracking; plastic encapsulated devices; silicone gel die overcoat; silicone gel die overcoat thickness; ultra low stress molding compound; Coatings; Failure analysis; Internal stresses; Packaging; Passivation; Plastics; Polyimides; Silicon; Thermal expansion; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-5220-3
Type :
conf
DOI :
10.1109/RELPHY.1999.761637
Filename :
761637
Link To Document :
بازگشت