DocumentCode
2764788
Title
Three-Dimensional Compositional Analysis of SiGe Structures with a Laser Assisted Local Electrode Atom Probe
Author
Thompson, Keith ; Larson, D.J. ; Bunion, J.H. ; Kelly, T.F.
Author_Institution
Imago Sci. Instruments Corp., Madison, WI
fYear
2006
fDate
15-17 May 2006
Firstpage
1
Lastpage
2
Abstract
The addition of high speed laser pulsing and a local electrode geometry has transformed the 3D atom probe into a characterization tool that is capable of analyzing Si-based nanostructures on an atom-by-atom basis (K. Thompson, 2005 and K. Thompson, 2006) . Doped and undoped SiGe structures were successfully analyzed in three dimensions with the laser assisted local electrode atom probe (L2EAP). The results correlate favorably to secondary ion mass spectrometry (SIMS). Advantages and unique capabilities of the atom-probe are described
Keywords
Ge-Si alloys; atom probe field ion microscopy; secondary ion mass spectroscopy; 3D atom probe; SiGe; laser assisted local electrode atom probe; laser pulsing; local electrode geometry; secondary ion mass spectrometry; Atom lasers; Atomic beams; Atomic measurements; Electrodes; Geometrical optics; Germanium silicon alloys; Mass spectroscopy; Nanostructures; Probes; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location
Princeton, NJ
Print_ISBN
1-4244-0461-4
Type
conf
DOI
10.1109/ISTDM.2006.246524
Filename
1716018
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