• DocumentCode
    2765093
  • Title

    Silver glass die attach adhesives for power semiconductor devices

  • Author

    Dequidt, M. ; Guinet, J. ; Hubert, J.C.

  • Author_Institution
    La Telemecanique, Paris, France
  • fYear
    1989
  • fDate
    26-28 Apr 1989
  • Firstpage
    337
  • Lastpage
    341
  • Abstract
    The authors examine mechanisms of adhesion between gold or silver backside chips and metallized substrates commonly used in individual power hybrid applications. EDS (energy dispersive spectroscopy) analyses and SEM (scanning electron microscopy) observations indicate that adhesion is due to silver diffusion in the different metal layers, whereas for alumina the bond is chemical. The bond for the Au- or Ag-backside/silicon-die/silver-glass/Ag-plated copper systems is probably due to interdiffusion mechanisms. An optimized process for power chips has been developed; it is demonstrated that the presence of voids is dependent on the drying temperature
  • Keywords
    composite materials; glass; hybrid integrated circuits; materials testing; microassembling; power integrated circuits; EDS; SEM; Si die; die attach adhesives; drying temperature; energy dispersive spectroscopy; individual power hybrid applications; interdiffusion mechanisms; mechanisms of adhesion; metallized substrates; optimized process; power chips; power semiconductor devices; scanning electron microscopy; voids; Adhesives; Chemical analysis; Glass; Gold; Metallization; Microassembly; Power semiconductor devices; Scanning electron microscopy; Silver; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Manufacturing Technology Symposium, 1989, Proceedings. Japan IEMT Symposium, Sixth IEEE/CHMT International
  • Conference_Location
    Nara
  • Type

    conf

  • DOI
    10.1109/IEMTS.1989.76170
  • Filename
    76170