DocumentCode
2765093
Title
Silver glass die attach adhesives for power semiconductor devices
Author
Dequidt, M. ; Guinet, J. ; Hubert, J.C.
Author_Institution
La Telemecanique, Paris, France
fYear
1989
fDate
26-28 Apr 1989
Firstpage
337
Lastpage
341
Abstract
The authors examine mechanisms of adhesion between gold or silver backside chips and metallized substrates commonly used in individual power hybrid applications. EDS (energy dispersive spectroscopy) analyses and SEM (scanning electron microscopy) observations indicate that adhesion is due to silver diffusion in the different metal layers, whereas for alumina the bond is chemical. The bond for the Au- or Ag-backside/silicon-die/silver-glass/Ag-plated copper systems is probably due to interdiffusion mechanisms. An optimized process for power chips has been developed; it is demonstrated that the presence of voids is dependent on the drying temperature
Keywords
composite materials; glass; hybrid integrated circuits; materials testing; microassembling; power integrated circuits; EDS; SEM; Si die; die attach adhesives; drying temperature; energy dispersive spectroscopy; individual power hybrid applications; interdiffusion mechanisms; mechanisms of adhesion; metallized substrates; optimized process; power chips; power semiconductor devices; scanning electron microscopy; voids; Adhesives; Chemical analysis; Glass; Gold; Metallization; Microassembly; Power semiconductor devices; Scanning electron microscopy; Silver; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Manufacturing Technology Symposium, 1989, Proceedings. Japan IEMT Symposium, Sixth IEEE/CHMT International
Conference_Location
Nara
Type
conf
DOI
10.1109/IEMTS.1989.76170
Filename
76170
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