Title :
Investigation of Upper and Lower Limits of Carrier Concentration for Two-Dimensional Electron Gas in Strained Silicon
Author :
Jian Liu ; Bin Shi ; Keji Lai ; Tzu-Ming Lu ; Ya-Hong Xie ; Tsui, D.C.
Author_Institution :
Dept. of Mater. Sci. & Eng., California Univ., Los Angeles, CA
Abstract :
Both the simulation and experimental results confirm that there exist upper and lower limits of carrier concentration in the quantum well. The small difference between the upper and lower limits explains the narrow distribution of 2DEG density from all published experimental observations in strained Si. We report the lowest as-grown carrier density to date in Si/SiGe heterostructures
Keywords :
Ge-Si alloys; electron density; elemental semiconductors; semiconductor quantum wells; silicon; two-dimensional electron gas; 2D electron gas; 2DEG density; Si-SiGe; carrier concentration lower limits; carrier concentration upper limits; carrier density; quantum wells; semiconductor heterostructures; strained silicon; Charge carrier density; Charge carrier processes; Doping; Electrons; Germanium silicon alloys; Molecular beam epitaxial growth; Physics; Silicon germanium; Substrates; Temperature;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246539
