Title :
Control and characterization of strain in SiGe/Si heterostructures with engineered misfit dislocations
Author :
Sakai, Akihiko ; Taoka, Noriyuki ; Mochizuki, Sho ; Yukawa, K. ; Nakatsuka, Osamu ; Takeda, Shigeki ; Kimura, Shunji ; Ogawa, Michiko ; Zaima, Shigeaki
Author_Institution :
Graduate Sch. of Eng., Nagoya Univ.
Abstract :
We have demonstrated control and characterization of strain in SiGe and Ge layers on Si(001) substrates with engineered misfit dislocations at the heterointerface. X-ray microdiffraction revealed quantitatively fine structures in micrometer-sized regions of the SiGe layers. The introduction of PEDN can alter the manner of strain relaxation of SiGe on Si(001) and raise the possibility of solving problems caused by the 60deg dislocation
Keywords :
Ge-Si alloys; X-ray diffraction; dislocation damping; elemental semiconductors; germanium; silicon; strain control; stress relaxation; PEDN; SiGe-Si; X-ray microdiffraction; misfit dislocations; semiconductor heterostructures; strain characterization; strain control; strain relaxation; Annealing; Capacitive sensors; Crystallization; Fluctuations; Germanium silicon alloys; MOSFETs; Morphology; Silicon germanium; Strain control; Substrates;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246544
