Improved Carbon Incorporation in Selective Epitaxial Growth of SiGe:C for HBT Applications

Author

Brossard, F. ; Vandelle, B. ; Chevalier, P. ; Dutartre, D.

Author_Institution

STMicroelectronics, Crolles

fYear

2006

fDate

15-17 May 2006

Firstpage

1

Lastpage

2

Abstract

We studied the incorporation of carbon in SiGe with high growth rate (HGR) selective epitaxy. The incorporation of C in substitutional sites was found to be dramatically enhanced with the HGR process. Both electrical results and the SIMS/XRD analyses are in agreement. We have to note the large improvement since recombination is observed for C concentration as low as 0.1% for the LGR process, whereas no degradation is observed on the whole studied range (0-0.35%) with the HGR process. And such an improved C incorporation is clearly favorable to reduce B diffusion, as shown with static and dynamic HBT performances. More complete results including SIMS diffusion profiles and HBTs performances are reported in the full paper

Keywords

Ge-Si alloys; X-ray diffraction; carbon; diffusion; epitaxial growth; heterojunction bipolar transistors; secondary ion mass spectra; semiconductor growth; HBT performances; HGR process; HGR selective epitaxy; LGR process; SIMS diffusion profiles; SIMS-XRD analyses; SiGe:C; heterojunction bipolar transistors; high growth rate process; high growth rate selective epitaxy; low growth rate process; selective epitaxial growth; Atomic layer deposition; Capacitive sensors; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Kinetic theory; Lattices; Silicon germanium; Temperature; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Conference_Location

Princeton, NJ

Print_ISBN

1-4244-0461-4

Type

conf

DOI

10.1109/ISTDM.2006.246547

Filename

1716041