Title :
Characterization of in-plane strain relaxation in strained layers after mesa isolation using a newly developed plane-NBD method
Author :
Usuda, Koji ; Irisawa, T. ; Numata, T. ; Hirashita, N. ; Takagi, Shinichi
Author_Institution :
MIRAI-ASET, Kawasaki
Abstract :
We have developed the plane-NBD method and applied to characterization of strain relaxation of compressive strained SGOI layers. It was found that strain relaxation within compressive-strained SGOI layers after isolation processing were dependent on mesa structures. The plane-NBD method is unique and effective for evaluating in-plane strain distribution within small and thin strained layers in sub-mum size
Keywords :
Ge-Si alloys; electron diffraction; isolation technology; semiconductor-insulator boundaries; stress relaxation; SiGe; SiGe-on-insulator; compressive strained SGOI layers; in-plane strain distribution; in-plane strain relaxation; mesa isolation; mesa structures; nanobeam electron diffraction; plane-NBD method; submicron size; Capacitive sensors; Diffraction; Lattices; MOSFET circuits; Raman scattering; Size measurement; Spectroscopy; Strain measurement; Substrates; Uniaxial strain;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246551
