Fabrication and Characterization of Patterned Si/SiGe Lines with Asymmetric Biaxial Stress

Author

Buca, Dan ; Hollander, B. ; Feste, S. ; Trinkaus, H. ; Mantl, Siegfried ; Loo, Roger ; Caymax, M.

Author_Institution

Center of Nanoelectronic Syst. for Inf. Technol., Forschungzentrum Julich GmbH

fYear

2006

fDate

15-17 May 2006

Firstpage

1

Lastpage

2

Abstract

We have investigated strain relaxation of patterned SiGe lines after He implantation and annealing. Asymmetric relaxation of the SiGe lines transforms biaxial stress into nearly uniaxial stress for very narrow lines. The effect of the anisotropic stress on the carrier mobility of strained silicon on top of the SiGe lines will be discussed in the frame of the piezoelectric resistivity model as presented by Kanda (1982)

Keywords

Ge-Si alloys; annealing; carrier mobility; elemental semiconductors; helium; ion implantation; piezoresistance; stress relaxation; He; Si-SiGe; anisotropic stress; asymmetric biaxial stress; asymmetric relaxation; carrier mobility; ion annealing; ion implantation; piezoelectric resistivity model; strain relaxation; strained silicon; uniaxial stress; Annealing; Capacitive sensors; Electron mobility; Fabrication; Germanium silicon alloys; Helium; Ion implantation; Silicon germanium; Strain measurement; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Conference_Location

Princeton, NJ

Print_ISBN

1-4244-0461-4

Type

conf

DOI

10.1109/ISTDM.2006.246552

Filename

1716046