• DocumentCode
    2765325
  • Title

    Strain Control and Electrical Properties of Stripe Patterned Si/Si1-xGex/Si

  • Author

    Jangwoong Uhm ; Sakuraba, Masao ; Murota, Junichi

  • Author_Institution
    Res. Inst. of Electr. Commun., Tohoku Univ., Sendai
  • fYear
    2006
  • fDate
    15-17 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In the present work, we investigated the behavior of strain and resistivity by submicron-width stripe patterning of Si/Si0.6Ge0.4/Si(100) heterostructure
  • Keywords
    Ge-Si alloys; electrical resistivity; elemental semiconductors; internal stresses; silicon; strain control; Si-Si0.6Ge0.4-Si; electrical properties; strain control; stripe patterned heterostructures; submicron-width stripe patterning; Capacitive sensors; Charge carrier processes; Conductivity; Electrical resistance measurement; Electron mobility; Laboratories; Plasma measurements; Scanning electron microscopy; Strain control; Strain measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    1-4244-0461-4
  • Type

    conf

  • DOI
    10.1109/ISTDM.2006.246554
  • Filename
    1716048
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2765325