Title :
SiGe HBT Linearity Comparison Between CE and CB Configurations
Author :
Qin, G. ; Jiang, N. ; Wang, Guibin ; Ma, Z.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin-Madison Univ., Madison, WI
Abstract :
In this paper, a comprehensive analytical study on the linearity of both CE and CB SiGe HBTs is presented for the first time. The linearity comparison between CE and CB SiGe HBTs was also made and experimentally verified at 1.9 GHz
Keywords :
UHF bipolar transistors; heterojunction bipolar transistors; semiconductor device measurement; semiconductor device models; 1.9 GHz; CB configurations; CE configurations; HBT linearity comparison; SiGe; Capacitance; Drives; Fingers; Germanium silicon alloys; Heterojunction bipolar transistors; Linearity; Power amplifiers; Power engineering and energy; Radio frequency; Silicon germanium;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246559
