• DocumentCode
    2765439
  • Title

    SiGe Impulse Generator for Single-Band Ultra-Wideband Applications

  • Author

    Dederer, J. ; Trasser, A. ; Schumacher, Hermann

  • Author_Institution
    Dept. of Electron Devices & Circuits, Ulm Univ.
  • fYear
    2006
  • fDate
    15-17 May 2006
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    In this paper, we present a compact impulse generator that is fabricated in an inexpensive ATMEL SiGe HBT technology (Schuppen et al., 2001). The realized circuit exhibits pulses with adjustable peak-to-peak amplitudes of up to 530mV. The corresponding broadband spectrum of the ultra-short pulses is centered around 5.7GHz
  • Keywords
    Ge-Si alloys; bipolar transistor circuits; microwave circuits; pulse generators; ATMEL; HBT technology; SiGe; broadband spectrum; impulse generator; single band ultra wideband applications; ultra-short pulses; Germanium silicon alloys; Pulse amplifiers; Pulse circuits; Pulse generation; Pulse measurements; Pulse shaping methods; Resistors; Shape; Silicon germanium; Ultra wideband technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
  • Conference_Location
    Princeton, NJ
  • Print_ISBN
    1-4244-0461-4
  • Type

    conf

  • DOI
    10.1109/ISTDM.2006.246561
  • Filename
    1716055
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2765439