Title :
X-band and K-band low-phase-noise VCOs using SiGe BiCMOS technology
Author :
Tartarin, J.-G. ; Wong, K.W. ; Tournier, E. ; Llopis, O.
Author_Institution :
Paul Sabatier Univ., Toulouse
Abstract :
BiCMOS SiGe technologies offer great opportunities due to the high integration´s level with both analog and digital circuits operating at high frequencies, and also base-band modules matched to modern telecommunications systems´ requirements. X-band and K-band VCOs MMIC using BiCMOS processes have been presented. Excellent low-phase noise performances are obtained using a matched design procedure based on the transistor sizing and biasing conditions. A comparison on architecture (X-band work) is also proposed for circuit designers. Lastly, a new figure of merit is introduced to better account of parameters such as the tuning frequency range and the output power
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC oscillators; voltage-controlled oscillators; BiCMOS technology; K-band VCO; SiGe; VCO MMIC; X-band VCO; low-phase-noise VCO; transistor sizing; BiCMOS integrated circuits; Circuit noise; Circuit optimization; Digital circuits; Frequency; Germanium silicon alloys; K-band; MMICs; Silicon germanium; Tuning;
Conference_Titel :
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location :
Princeton, NJ
Print_ISBN :
1-4244-0461-4
DOI :
10.1109/ISTDM.2006.246562
