DocumentCode
2765500
Title
Thermal Stability of strained-SOI (sSOI)
Author
Fukumoto, Ayako ; Sawano, Kentarou ; Hoshi, Yusuke ; Yoshimi, Masato ; Shiraki, Yasuhiro
Author_Institution
Musashi Inst. of Technol., Tokyo
fYear
2006
fDate
15-17 May 2006
Firstpage
1
Lastpage
2
Abstract
SiGe-free strained-Si-on-insulator (sSOI) is a promising structure for near-future CMOS circuits because it has benefits of both strained Si and SOI and it is free from problems relating to SiGe buffer layers. In this study, the strain state and thermal stability of sSOI substrates fabricated by the wafer bonding technique was investigated in detail by Raman spectroscopy and X-ray diffraction (XRD) reciprocal space mapping (RSM)
Keywords
Raman spectroscopy; X-ray diffraction; internal stresses; silicon-on-insulator; thermal analysis; thermal stability; wafer bonding; Raman spectroscopy; X-ray diffraction; reciprocal space mapping; sSOI substrates; strain state; strained-SOI; strained-silicon-on-insulator; thermal stability; wafer bonding technique; Buffer layers; Capacitive sensors; Circuit stability; Germanium silicon alloys; Raman scattering; Silicon germanium; Spectroscopy; Thermal stability; Wafer bonding; X-ray diffraction;
fLanguage
English
Publisher
ieee
Conference_Titel
SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International
Conference_Location
Princeton, NJ
Print_ISBN
1-4244-0461-4
Type
conf
DOI
10.1109/ISTDM.2006.246565
Filename
1716059
Link To Document