Interdiffusion in SiGe/Si Epitaxial Heterostructures

Author

Guangrui Xia ; Canonico, Massimo ; Hoyt, Judy L.

Author_Institution

Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA

fYear

2006

fDate

15-17 May 2006

Firstpage

1

Lastpage

2

Abstract

The Si-Ge interdiffusivity in epitaxial strained Si/Si_1-yGe_y/strained Si/relaxed Si_1-xGe_x and strained Si/relaxed Si_1-xGe_x heterostructures was systematically extracted for Ge fractions between 0 and 0.56 over a temperature range of 770 - 920 degC. Boltzmann-Matano analysis was applied to extract interdiffusivity from diffused Ge profiles of strained Si/relaxed Si_1-xGe_x heterostructures. TSUPREM-4 was used to fit SIMS profiles and refine the extracted interdiffusivity. Significantly enhanced Si-Ge interdiffusion was observed in Si_1-yGe_y layers under compressive strain. These results were incorporated into an interdiffusion model that successfully predicts experimental interdiffusion of various SiGe heterostructures

Keywords

Ge-Si alloys; chemical interdiffusion; elemental semiconductors; epitaxial growth; epitaxial layers; semiconductor-insulator boundaries; 770 to 920 C; Boltzmann-Matano analysis; SIMS profiles; SiGe-Si; TSUPREM-4; epitaxial heterostructures; interdiffusion model; Annealing; CMOS technology; Capacitive sensors; Data mining; Germanium silicon alloys; Laboratories; Raman scattering; Silicon germanium; Temperature distribution; Tensile strain;

fLanguage

English

Publisher

ieee

Conference_Titel

SiGe Technology and Device Meeting, 2006. ISTDM 2006. Third International

Conference_Location

Princeton, NJ

Print_ISBN

1-4244-0461-4

Type

conf

DOI

10.1109/ISTDM.2006.246566

Filename

1716060