Monolithically integrated junction FETS and NEMS

We present the monolithic integration of junction FETS and NEMS for enhanced signal transduction and signal processing. Monolithic integration is preferred to hybrid integration due to reduce parasitics and mismatches. In this paper, the JFET is integrated directly into SOI MEMS cantilever to form an extra-tight integration between sensing and electronic integration. When a cantilever connected to the JFET is electrostatically actuated; its motion directly affects the current in the JFET. The devices were realized in 2um thick SOI cross-wire beams, with a novel MoSi2 contact metallization for stress minimization and ohmic contact. The pull-in voltage for the NEMS cantilever was 21V and the pinch-off voltage of the JFET was -19V.