DocumentCode :
2765641
Title :
Low power random number generator using single electron transistor
Author :
Tannu, Swamit ; Sharma, Abhishek
Author_Institution :
Dept. of Electron. Eng., Sardar Patel Inst. of Technol., Mumbai, India
fYear :
2012
fDate :
19-20 Oct. 2012
Firstpage :
1
Lastpage :
4
Abstract :
Realization of high-quality random number generator (RNG) is essential for secure communication. In this paper, a RNG, which utilizes single-electron phenomena, is proposed. A room-temperature operating titanium oxide single-electron transistor(SET) is considered. Electron pocket is used as a high-quality, ultra-small RNG. In the proposed RNG, a stochastic single-electron capture/emission process is utilized to generate the 16 bit random numbers. Because of its small-size and low-power, it has potential to change the future of encryption.
Keywords :
cryptographic protocols; random number generation; single electron transistors; RNG; SET; cryptographic protocols; electron pocket; encryption; high-quality random number generator; low power random number generator; room-temperature operating titanium oxide single-electron transistor; secured communication; single-electron phenomena; stochastic single-electron capture process; stochastic single-electron emission process; Bit rate; Cryptography; Fluctuations; Generators; Integrated circuit modeling; Noise; Single electron transistors; Electron capture/emission; Random Number Generator; Single Electron Transistor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Communication, Information & Computing Technology (ICCICT), 2012 International Conference on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4577-2077-2
Type :
conf
DOI :
10.1109/ICCICT.2012.6398099
Filename :
6398099
Link To Document :
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