DocumentCode :
2765723
Title :
MEMS-based thick film PZT vibrational energy harvester
Author :
Lei, A. ; Xu, R. ; Thyssen, A. ; Stoot, A.C. ; Christiansen, T.L. ; Hansen, K. ; Lou-Moller, R. ; Thomsen, E.V. ; Birkelund, K.
Author_Institution :
Dept. of Micro- & Nanotechnol., Tech. Univ. of Denmark, Lyngby, Denmark
fYear :
2011
fDate :
23-27 Jan. 2011
Firstpage :
125
Lastpage :
128
Abstract :
We present a MEMS-based unimorph silicon/PZT thick film vibrational energy harvester with an integrated proof mass. We have developed a process that allows fabrication of high performance silicon based energy harvesters with a yield higher than 90%. The process comprises a KOH etch using a mechanical front side protection of an SOI wafer with screen printed PZT thick film. The fabricated harvester device produces 14.0 μW with an optimal resistive load of 100 kΩ from 1g (g=9.81 m s-2) input acceleration at its resonant frequency of 235 Hz.
Keywords :
energy harvesting; etching; lead compounds; microfabrication; micromechanical devices; silicon; silicon-on-insulator; thick film devices; KOH etch; MEMS; PZT-Si; SOI wafer; frequency 235 Hz; integrated proof mass; mechanical front side protection; optimal resistive load; power 14 muW; resistance 100 kohm; resonant frequency; unimorph silicon-PZT thick film vibrational energy harvester; Acceleration; Energy harvesting; Fabrication; Resonant frequency; Silicon; Thick films; Vibrations;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
Conference_Location :
Cancun
ISSN :
1084-6999
Print_ISBN :
978-1-4244-9632-7
Type :
conf
DOI :
10.1109/MEMSYS.2011.5734377
Filename :
5734377
Link To Document :
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