Title :
Characterization of KMPR®1025 as a masking layer for deep reactive ion etching of fused silica
Author :
Ray, T. ; Zhu, H. ; Elango, I.S. ; Meldrum, D.R.
Abstract :
In this paper we report our results from the process development and characterization of KMPR®1025 as a complimentary metal-oxide semiconductor (CMOS) process compatible masking layer for the deep reactive ion etching (RIE) of fused silica. The processing conditions and the etch resistivity of KMPR®1025 as a function of different parameters like pressure, gaseous composition, gas flow rate and hard-bake conditions are examined in details in this study.
Keywords :
CMOS integrated circuits; masks; silicon compounds; sputter etching; CMOS process; KMPR 1025; RIE; SiO2; complimentary metal-oxide semiconductor process; deep reactive ion etching; fused silica; gas flow rate; gaseous composition; hard-bake condition; masking layer; Argon; Conductivity; Etching; Fluid flow; Optical filters; Silicon compounds; Sulfur hexafluoride;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
Conference_Location :
Cancun
Print_ISBN :
978-1-4244-9632-7
DOI :
10.1109/MEMSYS.2011.5734399
