DocumentCode :
2766186
Title :
Characterisation of Electron Transport in MBE Grown Indium Nitride
Author :
Fehlberg, Tamara B. ; Umana-Membreno, Gilberto A. ; Nener, Brett D. ; Parish, Giacinta ; Gallinat, Chad S. ; Koblmüller, Gregor ; Bernardis, Sarah ; Speck, James S.
Author_Institution :
Western Australia Univ., Crawley
fYear :
2006
fDate :
6-8 Dec. 2006
Firstpage :
11
Lastpage :
14
Abstract :
Transport properties of multiple electron species in two samples of indium nitride (InN) grown by molecular beam epitaxy (MBE) have been measured. Variable field Hall and resisitivity data were used in a quantitative mobility spectrum analysis (QMSA) to extract the concentrations and mobilities of two electron species, attributed to the bulk and a surface accumulation layer. While the properties of the bulk electron species remain consistent between the samples, grown under similar conditions, the surface properties are found to vary significantly.
Keywords :
electron transport theory; indium compounds; molecular beam epitaxial growth; bulk electron species; electron transport characterisation; grown indium nitride; molecular beam epitaxy; quantitative mobility spectrum analysis; surface accumulation layer; variable field hall; Data mining; Electron mobility; Gallium nitride; Indium; Magnetic field measurement; Molecular beam epitaxial growth; Plasma measurements; Plasma temperature; Temperature measurement; Thermal variables measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4244-0578-7
Electronic_ISBN :
978-1-4244-0578-7
Type :
conf
DOI :
10.1109/COMMAD.2006.4429865
Filename :
4429865
Link To Document :
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