Spectral Properties and dynamics of carriers in Si quantum dots in SiN matrices

Author

Van Dao, Lap ; Davis, Jeff ; Hannaford, Peter ; Cho, Young-Hyun ; Green, Martin A. ; Cho, Eun-Chel

Author_Institution

Swinburne Univ. of Technol., Melbourne

fYear

2006

fDate

6-8 Dec. 2006

Firstpage

15

Lastpage

17

Abstract

Femtosecond two-color spectrally-resolved nonlinear spectroscopy is used to study the dynamics of excited carriers in Si quantum dot structures embedded in SiN. Ultrashort population relaxation times of < 400 fs and ~ 6-10 ps are measured and discussed in the context of the different contributions from zero-phonon and transverse optical and transverse acoustic phonon-assisted transitions.

Keywords

elemental semiconductors; phonon spectra; quantum dot lasers; semiconductor quantum dots; silicon; silicon compounds; spectral analysis; SiN-Si; excited carriers; femtosecond nonlinear spectroscopy; laser spectroscopy; optical property; quantum dot structure; spectral property; transverse acoustic phonon-assisted transition; transverse optical phonon-assisted transition; ultrashort population relaxation; Nonlinear optics; Optical mixing; Optical pumping; Photovoltaic cells; Plasma temperature; Quantum dots; Silicon compounds; Spectroscopy; Stimulated emission; Ultrafast optics; Laser spectroscopy; Optical properties of low-dimensional structures; Ultrafast optical measurements in condensed matter;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4244-0578-7

Electronic_ISBN

978-1-4244-0578-7

Type

conf

DOI

10.1109/COMMAD.2006.4429866

Filename

4429866