DocumentCode :
2766261
Title :
Dry etching of single crystal PMN-PT piezoelectric material
Author :
Agnus, Joel ; Ivan, Ioan Alexandru ; Queste, Samuel
Author_Institution :
Dept. AS2M, UFC, Besançon, France
fYear :
2011
fDate :
23-27 Jan. 2011
Firstpage :
237
Lastpage :
240
Abstract :
During the last decade, the applications of PMN-PT spread significantly. Unlike PZT, the appropriate microtechnologies for PMN-PT Piezo-MEMS aren´t fully documented in the literature. This paper deals with the PMN-PT etching by inductively coupled plasma (ICP) technique, also known as DRIE. The paper quantitatively presents the etching parameters of PMN-PT by the Ar/C4F8 gas combination and reports some related useful experience.
Keywords :
lead compounds; micromechanical devices; piezoelectric materials; sputter etching; DRIE; ICP technique; PMN-PT Piezo-MEMS; PMN-PbTiO3; dry etching; gas combination; inductively coupled plasma technique; microtechnology; single crystal PMN-PT piezoelectric material; Argon; Crystals; Dry etching; Nickel; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
Conference_Location :
Cancun
ISSN :
1084-6999
Print_ISBN :
978-1-4244-9632-7
Type :
conf
DOI :
10.1109/MEMSYS.2011.5734405
Filename :
5734405
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2766261
بازگشت