• DocumentCode
    2766261
  • Title

    Dry etching of single crystal PMN-PT piezoelectric material

  • Author

    Agnus, Joel ; Ivan, Ioan Alexandru ; Queste, Samuel

  • Author_Institution
    Dept. AS2M, UFC, Besançon, France
  • fYear
    2011
  • fDate
    23-27 Jan. 2011
  • Firstpage
    237
  • Lastpage
    240
  • Abstract
    During the last decade, the applications of PMN-PT spread significantly. Unlike PZT, the appropriate microtechnologies for PMN-PT Piezo-MEMS aren´t fully documented in the literature. This paper deals with the PMN-PT etching by inductively coupled plasma (ICP) technique, also known as DRIE. The paper quantitatively presents the etching parameters of PMN-PT by the Ar/C4F8 gas combination and reports some related useful experience.
  • Keywords
    lead compounds; micromechanical devices; piezoelectric materials; sputter etching; DRIE; ICP technique; PMN-PT Piezo-MEMS; PMN-PbTiO3; dry etching; gas combination; inductively coupled plasma technique; microtechnology; single crystal PMN-PT piezoelectric material; Argon; Crystals; Dry etching; Nickel; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
  • Conference_Location
    Cancun
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4244-9632-7
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2011.5734405
  • Filename
    5734405
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2766261