Carburisation layers for the growth of silicon carbide on silicon

Author

Attolini, G. ; Watts, B. ; Bosi, M. ; Frigeri, C. ; Ferrari, C. ; Salviati, G. ; Besagni, T. ; Kaciulis, S. ; Pandolfi, L.

Author_Institution

lMEM-CNR, Parma

fYear

2006

fDate

6-8 Dec. 2006

Firstpage

32

Lastpage

34

Abstract

This work describes the growth of 3C-SiC on silicon by vapour phase epitaxy. The carburisation, a key step to nucleating SiC on silicon is treated in detail. The carburisation layer, characterised by X ray diffraction, and transmission electron microscopy, was found to be smooth, epitaxial and monocrystalline on the substrate. Chemical analysis by XPS shows that the layer is Si rich and that residues of the precursors remain on the surface.

Keywords

X-ray diffraction; X-ray photoelectron spectra; elemental semiconductors; silicon; silicon compounds; substrates; transmission electron microscopy; vapour phase epitaxial growth; wide band gap semiconductors; Chemical analysis; X ray diffraction; XPS; carburisation layers; monocrystalline; silicon; silicon carbide; substrate; transmission electron microscopy; vapour phase epitaxy; Atomic force microscopy; Epitaxial growth; Hafnium; Silicon carbide; Substrates; Surface treatment; Temperature; Transmission electron microscopy; Wet etching; X-ray diffraction; XPS; nucleation; silicon carbide; vapour phase epitaxy;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4244-0578-7

Electronic_ISBN

978-1-4244-0578-7

Type

conf

DOI

10.1109/COMMAD.2006.4429871

Filename

4429871