Title :
Correlation of Pseudo-MOS transistor and Hall effect measurements in thin SOI wafers
Author :
Nguyen, Q.T. ; Antoszewski, J. ; Faraone, L. ; Bresson, N. ; Gentil, P. ; Cristoloveanu, S.
Author_Institution :
IMEP-INP Grenoble-MINATEC, Grenoble
Abstract :
The carrier mobility in advanced SOI wafers was investigated by Pseudo-MOS transistor and Hall effect. Substrate biasing enables these measurements even when the Si film is fully depleted. The data indicate a good correlation between the two methods. Hall mobility is higher than the effective pseudo-MOSFET mobility as a result of prevailing phonon scattering.
Keywords :
Hall mobility; MOSFET; silicon; silicon-on-insulator; Hall effect measurements; Hall mobility; SOI wafers; Si; Si film; carrier mobility; phonon scattering; pseudo-MOS transistor; pseudo-MOSFET mobility; substrate biasing; Electron mobility; Hall effect; MOSFETs; Magnetic field measurement; Phonons; Semiconductor films; Silicon on insulator technology; Substrates; Transconductance; Transistors; Hall effect; Pseudo-MOSFET; Sillcon-on-insulator;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4244-0578-7
Electronic_ISBN :
978-1-4244-0578-7
DOI :
10.1109/COMMAD.2006.4429873
