• DocumentCode
    2766432
  • Title

    Low thermal-budget silicon sealed-cavity microencapsulation process

  • Author

    Sedky, S. ; Tawfik, H. ; Abdel Aziz, A. ; ElSaegh, S. ; Graham, A.B. ; Provine, J. ; Howe, R.T.

  • Author_Institution
    American Univ. in Cairo, Cairo, Egypt
  • fYear
    2011
  • fDate
    23-27 Jan. 2011
  • Firstpage
    276
  • Lastpage
    279
  • Abstract
    This work demonstrates the application of pulsed-laser processing for sealing release holes in silicon membranes. Holes in the membrane are sealed without deposition, similar to the silicon surface migration sealing process. In contrast to the 1100°C furnace anneal required for the migration process, the pulsed-laser process localizes the heat to the top few microns of the substrate, with the bulk kept at near to room temperature. In addition, there is no need for special surface treatment, or for a controlled environment. Furthermore, the treatment can be applied to selected regions of the substrate.
  • Keywords
    electronics packaging; elemental semiconductors; encapsulation; laser materials processing; membranes; microfabrication; seals (stoppers); silicon; surface treatment; Si; pulsed-laser process; pulsed-laser processing; silicon membranes release holes sealing; silicon surface migration sealing process; surface treatment; temperature 293 K to 298 K; thermal-budget silicon sealed-cavity microencapsulation process; Argon; Laser beams; Quantum dot lasers; Seals; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
  • Conference_Location
    Cancun
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4244-9632-7
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2011.5734415
  • Filename
    5734415