DocumentCode
2766432
Title
Low thermal-budget silicon sealed-cavity microencapsulation process
Author
Sedky, S. ; Tawfik, H. ; Abdel Aziz, A. ; ElSaegh, S. ; Graham, A.B. ; Provine, J. ; Howe, R.T.
Author_Institution
American Univ. in Cairo, Cairo, Egypt
fYear
2011
fDate
23-27 Jan. 2011
Firstpage
276
Lastpage
279
Abstract
This work demonstrates the application of pulsed-laser processing for sealing release holes in silicon membranes. Holes in the membrane are sealed without deposition, similar to the silicon surface migration sealing process. In contrast to the 1100°C furnace anneal required for the migration process, the pulsed-laser process localizes the heat to the top few microns of the substrate, with the bulk kept at near to room temperature. In addition, there is no need for special surface treatment, or for a controlled environment. Furthermore, the treatment can be applied to selected regions of the substrate.
Keywords
electronics packaging; elemental semiconductors; encapsulation; laser materials processing; membranes; microfabrication; seals (stoppers); silicon; surface treatment; Si; pulsed-laser process; pulsed-laser processing; silicon membranes release holes sealing; silicon surface migration sealing process; surface treatment; temperature 293 K to 298 K; thermal-budget silicon sealed-cavity microencapsulation process; Argon; Laser beams; Quantum dot lasers; Seals; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
Conference_Location
Cancun
ISSN
1084-6999
Print_ISBN
978-1-4244-9632-7
Type
conf
DOI
10.1109/MEMSYS.2011.5734415
Filename
5734415
Link To Document