Title :
Direct measurement of the inter-diffusion in quantum wells enhanced by group V intermixing for InP- based structures
Author :
Hulko, O. ; Thompson, D.A. ; Simmons, J.G.
Author_Institution :
McMaster Univ., Hamilton
Abstract :
Group V inter-diffusion in InGaAsP/InP quantum wells (QW) has been studied using analytical electron microscopy in the temperature range of 600-850degC. The structure was grown by metalorganic chemical vapour deposition (MOCVD) and subsequently capped with a 100 nm thick layer of SiO2, Si3N4 or low temperature molecular beam epitaxy (MBE)-grown InP (LT-InP). Diffusion coefficients for the group V species were calculated from the width-concentration profiles and activation energies (Ealpha) together with diffusivity (D0) were obtained from Arrhenius plots. Small as-grown compositional difference between quantum well and barriers (~6%) in group III prevents us from accurate analysis of ln-Ga interdiffusion.
Keywords :
III-V semiconductors; MOCVD; chemical interdiffusion; electron microscopy; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor quantum wells; silicon compounds; Arrhenius plots; InGaAsP; InP; InP-based structures; Si3N4; SiO2; analytical electron microscopy; group V inter-diffusion; group V intermixing; metalorganic chemical vapour deposition; molecular beam epitaxy; quantum wells; temperature 600 degC to 850 degC; Chemical vapor deposition; Dispersion; Electron microscopy; Indium gallium arsenide; Indium phosphide; MOCVD; Molecular beam epitaxial growth; Photoluminescence; Temperature distribution; Wavelength measurement; diffusion; energy dispersive X-ray analysis; indium gallium arsenide phosphide; photoluminescence; quantum wells;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4244-0578-7
Electronic_ISBN :
978-1-4244-0578-7
DOI :
10.1109/COMMAD.2006.4429884
