Title :
Vertical tunneling photoconductivity and field domain formation in thick-barrier GaAs/AlAs superlattice diodes
Author :
Kawasaki, K. ; Imazawat, M. ; Fujiwara, Koji
Author_Institution :
Sendai Nat. Coll. of Technol., Sendai
Abstract :
Vertical tunneling photoconductivity in thick barrier GaAs/AlAs superlattice diodes has been experimentally investigated at 18 K as a function of electric field at high and low illumination powers by photocurrent (PC) response and photoluminescence (PL) measurements. For the thick barrier SL diode, PC spectra show unusual behaviors such as negative PC peaks at the maximum positions of absorption under low field conditions. Both of the PC and PL intensities, furthermore, are enhanced under the low electric field when the excitation power is low. These PC and PL results suggest that the domain formation may occur under low excitation conditions in the thick barrier superlattice.
Keywords :
III-V semiconductors; aluminium compounds; electric fields; gallium arsenide; photoconductivity; photoluminescence; semiconductor superlattices; tunnelling; GaAs; electric field; excitation power; field domain formation; photocurrent response; photoluminescence measurement; temperature 18 K; thick-barrier superlattice diodes; vertical tunneling photoconductivity; Absorption; Diodes; Electric variables measurement; Gallium arsenide; Lighting; Photoconductivity; Photoluminescence; Superlattices; Thickness measurement; Tunneling; electric field domain; photoconductivity; superlattice;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4244-0578-7
Electronic_ISBN :
978-1-4244-0578-7
DOI :
10.1109/COMMAD.2006.4429886
