Silane-free atmospheric-plasma silicon deposition for MEMS devices

Author

Yokoyama, Y. ; Murakami, T. ; Izuo, S. ; Yoshida, Y. ; Itoh, T.

Author_Institution

BEANS Lab., Tokyo, Japan

fYear

2011

fDate

23-27 Jan. 2011

Firstpage

320

Lastpage

323

Abstract

We have developed a silane-free atmospheric-pressure plasma Si deposition process and investigated the properties of the deposited films by fabricating strain gauge type pressure sensors for the first time. The Si deposition process, which is known as plasma-enhanced chemical transport, utilizes the temperature difference between the solid Si source and the substrate in atmospheric hydrogen plasma. The Si films were deposited at a low temperature of 300 °C at 700 Torr. The Si films were composed of poly-crystals. The gauge factor became approximately 10. The bridge voltage of the pressure sensor was found to be proportional to the pressure. The Si films were deemed appropriate for use as MEMS devices.

Keywords

elemental semiconductors; microsensors; plasma deposition; pressure sensors; semiconductor thin films; silicon; strain gauges; strain sensors; MEMS devices; Si; atmospheric hydrogen plasma; atmospheric-pressure plasma; film deposition; plasma-enhanced chemical transport; polycrystals; pressure 700 torr; silane-free atmospheric-plasma silicon deposition process; silicon films; strain gauge type pressure sensors; temperature 300 degC; Chemicals; Films; Plasmas; Sensors; Silicon; Strain; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on

Conference_Location

Cancun

ISSN

1084-6999

Print_ISBN

978-1-4244-9632-7

Type

conf

DOI

10.1109/MEMSYS.2011.5734426

Filename

5734426