DocumentCode
276671
Title
Development of high power medium-wave radio transmitter with SIT
Author
Yamaguchi, T. ; Naka, H. ; Nasu, Y. ; Hayeiwa, K. ; Miyazaki, T.
Author_Institution
Japan Broadcasting Corp., Tokyo, Japan
fYear
1992
fDate
3-7 Jul 1992
Firstpage
29
Lastpage
33
Abstract
The authors present a new type of 20 to 100 kW radio transmitter using high-frequency power SITs (static induction transistor). This new version employs power SITS in its RF power amplifiers and modulators. High-frequency power SITs with 600 V sustaining voltage, 0.6 Ω on-resistance, and 400 W allowable loss have been designed and fabricated. The development of SIT-equipped transmitters is described
Keywords
field effect transistor circuits; field effect transistors; power amplifiers; radio transmitters; radiofrequency amplifiers; 0.6 ohm; 20 to 100 kW; 600 V; RF power amplifiers; SIT-equipped transmitters; allowable loss; high power medium-wave radio transmitter; modulators; on-resistance; static induction transistor; sustaining voltage;
fLanguage
English
Publisher
iet
Conference_Titel
Broadcasting Convention, 1992. IBC., International
Conference_Location
Amsterdam
Print_ISBN
0-85296-547-8
Type
conf
Filename
160408
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