• DocumentCode
    2766869
  • Title

    Characterisation of high-voltage IGBT modules at high temperature and high currents

  • Author

    Busatto, G. ; Abbate, C. ; Cascone, B. ; Manzo, R. ; Fratelli, L. ; Giannini, G. ; Iannuzzo, F. ; Velardi, F.

  • Author_Institution
    Dept. of Autom.,Electromagnetism, Inf. Eng. & Ind. Math., Univ.of Cassino, Italy
  • Volume
    2
  • fYear
    2003
  • fDate
    17-20 Nov. 2003
  • Firstpage
    1391
  • Abstract
    An experimental investigation about the behaviour of 3300 V - 1200 A IGBT modules both at high temperature and for large output currents is presented. The real IGBT turn-off limits, in terms of maximum switchable current, and the short circuit behaviour at larger different environmental temperatures are identified. The experimental study has been performed by means of a nondestructive set-up where IGBT modules are switched on an inductive load in presence of a protection circuit. It is activated at the occurrence of dangerous operating conditions, thus preventing the IGBT module failure. On the basis of an extensive experimental characterization, the paper demonstrates the possibility of operating up to 145 °C case temperature and at currents much larger than the declared RBSOA limits.
  • Keywords
    insulated gate bipolar transistors; 1200 A; 3300 V; IGBT turn-off limits; RBSOA limit; high-voltage IGBT modules characterisation; inductive load; maximum switchable current; protection circuit; short circuit behaviour; Automation; Circuit testing; Diodes; Insulated gate bipolar transistors; Performance evaluation; Power supplies; Switches; Switching circuits; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Electronics and Drive Systems, 2003. PEDS 2003. The Fifth International Conference on
  • Print_ISBN
    0-7803-7885-7
  • Type

    conf

  • DOI
    10.1109/PEDS.2003.1283185
  • Filename
    1283185