DocumentCode
2766869
Title
Characterisation of high-voltage IGBT modules at high temperature and high currents
Author
Busatto, G. ; Abbate, C. ; Cascone, B. ; Manzo, R. ; Fratelli, L. ; Giannini, G. ; Iannuzzo, F. ; Velardi, F.
Author_Institution
Dept. of Autom.,Electromagnetism, Inf. Eng. & Ind. Math., Univ.of Cassino, Italy
Volume
2
fYear
2003
fDate
17-20 Nov. 2003
Firstpage
1391
Abstract
An experimental investigation about the behaviour of 3300 V - 1200 A IGBT modules both at high temperature and for large output currents is presented. The real IGBT turn-off limits, in terms of maximum switchable current, and the short circuit behaviour at larger different environmental temperatures are identified. The experimental study has been performed by means of a nondestructive set-up where IGBT modules are switched on an inductive load in presence of a protection circuit. It is activated at the occurrence of dangerous operating conditions, thus preventing the IGBT module failure. On the basis of an extensive experimental characterization, the paper demonstrates the possibility of operating up to 145 °C case temperature and at currents much larger than the declared RBSOA limits.
Keywords
insulated gate bipolar transistors; 1200 A; 3300 V; IGBT turn-off limits; RBSOA limit; high-voltage IGBT modules characterisation; inductive load; maximum switchable current; protection circuit; short circuit behaviour; Automation; Circuit testing; Diodes; Insulated gate bipolar transistors; Performance evaluation; Power supplies; Switches; Switching circuits; Temperature; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics and Drive Systems, 2003. PEDS 2003. The Fifth International Conference on
Print_ISBN
0-7803-7885-7
Type
conf
DOI
10.1109/PEDS.2003.1283185
Filename
1283185
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