Wafer-level hermetic packaging technology for MEMS using anodically-bondable LTCC wafer

Author

Tanaka, Shuji ; Matsuzaki, Sakae ; Mohri, Mamoru ; Okada, Atsushi ; Fukushi, Hideyuki ; Esashi, Masayoshi

Author_Institution

Tohoku Univ., Sendai, Japan

fYear

2011

fDate

23-27 Jan. 2011

Firstpage

376

Lastpage

379

Abstract

This paper describes a versatile and reliable wafer-level hermetic packaging technology using an anodically-bondable low temperature cofired ceramic (LTCC) wafer, in which electrical feedthroughs and passive components can be embedded. The hermeticity of vacuum-sealed cavities was confirmed after 3000 cycles of heat shock (-40°C/+150°C, 30 min/30 min) by diaphragm method. The width of seal rings necessary for hermetic sealing of saw-diced chips is 0.1 mm or less. Electrical connection between MEMS on a Si wafer and feedthroughs in the LTCC wafer was established using Sn-containing metal stack simultaneously with anodic bonding. The developed wafer-level hermetic packaging technology is ready for practical applications.

Keywords

bonding processes; ceramic packaging; elemental semiconductors; firing (materials); integrated circuit interconnections; micromechanical devices; sealing materials; silicon; wafer level packaging; LTCC wafer; MEMS; Si; Sn-containing metal stack; anodic bonding; electrical connection; hermetic sealing; low temperature cofired ceramic wafer; passive components; silicon wafer; vacuum-sealed cavities; wafer-level hermetic packaging; Bonding; Glass; Metals; Micromechanical devices; Packaging; Seals; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on

Conference_Location

Cancun

ISSN

1084-6999

Print_ISBN

978-1-4244-9632-7

Type

conf

DOI

10.1109/MEMSYS.2011.5734440

Filename

5734440