Title :
Optical and structural properties of InAs quantum dots emitting near 1.5 μm grown on a GaAs substrate with an InxGa1-xAS metamorphic buffer layer
Author :
Tavakoli, S.G. ; Hulkot, Oksana ; Thompson, David A.
Author_Institution :
McMaster Univ., Hamilton
Abstract :
The structural and optical properties of InAs quantum dots (QDs) grown on an InxGa1-xAS metamorphic layer, with different x values, on GaAs substrates are presented. The results for various QD layer thicknesses and growth temperatures are reported. The density of the dots and their diameter increase as the In content in the metamorphic layer increases. For a layer of dots grown in a strained InGaAs quantum well, incorporated in a metamorphic layer with 30% In, room temperature photoluminescence emission at 1.57 μm has been demonstrated.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor quantum dots; semiconductor quantum wells; InGaAs; metamorphic buffer layer; optical properties; quantum dots; size 1.5 μm; strained quantum well; structural properties; Atomic force microscopy; Buffer layers; Gallium arsenide; Photoluminescence; Quantum dot lasers; Quantum dots; Quantum well lasers; Stimulated emission; Substrates; Temperature; Epitaxy; metamorphic strucutre; quantum dots;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4244-0577-0
Electronic_ISBN :
978-1-4244-0578-7
DOI :
10.1109/COMMAD.2006.4429909
