• DocumentCode
    2766910
  • Title

    Optical and structural properties of InAs quantum dots emitting near 1.5 μm grown on a GaAs substrate with an InxGa1-xAS metamorphic buffer layer

  • Author

    Tavakoli, S.G. ; Hulkot, Oksana ; Thompson, David A.

  • Author_Institution
    McMaster Univ., Hamilton
  • fYear
    2006
  • fDate
    6-8 Dec. 2006
  • Firstpage
    176
  • Lastpage
    179
  • Abstract
    The structural and optical properties of InAs quantum dots (QDs) grown on an InxGa1-xAS metamorphic layer, with different x values, on GaAs substrates are presented. The results for various QD layer thicknesses and growth temperatures are reported. The density of the dots and their diameter increase as the In content in the metamorphic layer increases. For a layer of dots grown in a strained InGaAs quantum well, incorporated in a metamorphic layer with 30% In, room temperature photoluminescence emission at 1.57 μm has been demonstrated.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; semiconductor quantum dots; semiconductor quantum wells; InGaAs; metamorphic buffer layer; optical properties; quantum dots; size 1.5 μm; strained quantum well; structural properties; Atomic force microscopy; Buffer layers; Gallium arsenide; Photoluminescence; Quantum dot lasers; Quantum dots; Quantum well lasers; Stimulated emission; Substrates; Temperature; Epitaxy; metamorphic strucutre; quantum dots;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
  • Conference_Location
    Perth, WA
  • Print_ISBN
    978-1-4244-0577-0
  • Electronic_ISBN
    978-1-4244-0578-7
  • Type

    conf

  • DOI
    10.1109/COMMAD.2006.4429909
  • Filename
    4429909
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2766910