• DocumentCode
    2767083
  • Title

    A physical based photodiode model

  • Author

    Naev, Tomasz ; Seegebrecht, Peter

  • Author_Institution
    Christian-Albrechts Univ., Kiel
  • fYear
    2006
  • fDate
    6-8 Dec. 2006
  • Firstpage
    228
  • Lastpage
    231
  • Abstract
    This work presents an analytical model which describes the opto-electronic conversion of a planar double photodiode. Our model predicts the steady-and the dynamic-state of the photodiode with high accuracy without using any fit parameters as will be shown by comparison with numerical and experimental results.
  • Keywords
    optoelectronic devices; photodiodes; semiconductor device models; frequency response; optoelectronic conversion; physical based photodiode model; planar double photodiode; semiconductor device modeling; spectral sensitivity; Charge carrier density; Frequency response; Infrared spectra; Integrated circuit modeling; Laplace equations; Optical devices; Optical sensors; Photoconductivity; Photodiodes; Thyristors; OEIC; frequency response; photodiode; puls response; semiconductor device modeling; spectral sensetivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
  • Conference_Location
    Perth, WA
  • Print_ISBN
    978-1-4244-0578-7
  • Electronic_ISBN
    978-1-4244-0578-7
  • Type

    conf

  • DOI
    10.1109/COMMAD.2006.4429922
  • Filename
    4429922