Finite fatigue lifetime of silicon under inert environment

Author

Kamiya, S. ; Ikeda, Y. ; Ishikawa, M. ; Izumi, H. ; Gaspar, J. ; Paul, O.

Author_Institution

Dept. of Mech. Eng., Nagoya Inst. of Technol., Nagoya, Japan

fYear

2011

fDate

23-27 Jan. 2011

Firstpage

432

Lastpage

435

Abstract

Silicon is susceptible to fatigue even under inert environment, although it has been believed not to be. This paper presents a brand-new image of the fatigue behavior of silicon obtained using the microtensile method. It is estimated that 25% of polysilicon specimens and 34% of single-crystal silicon will break in about 100 years in a nitrogen atmosphere at room temperature, when subjected to a fatigue loading of 100 kHz with a constant stress amplitude amounting to 75% of the scale parameter in the Weibull distribution of their static strength.

Keywords

Weibull distribution; elemental semiconductors; fatigue; fatigue testing; fracture; loading; mechanical strength; nitrogen; semiconductor thin films; silicon; tensile testing; Ni; Si; Weibull distribution; breakage; fatigue loading; finite fatigue lifetime; frequency 100 kHz; inert environment; microtensile method; polysilicon specimen; single-crystal silicon; static strength; temperature 293 K to 298 K; Fatigue; Fitting; Humidity; Loading; Silicon; Stress; Weibull distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on

Conference_Location

Cancun

ISSN

1084-6999

Print_ISBN

978-1-4244-9632-7

Type

conf

DOI

10.1109/MEMSYS.2011.5734454

Filename

5734454