DocumentCode :
2767209
Title :
Finite fatigue lifetime of silicon under inert environment
Author :
Kamiya, S. ; Ikeda, Y. ; Ishikawa, M. ; Izumi, H. ; Gaspar, J. ; Paul, O.
Author_Institution :
Dept. of Mech. Eng., Nagoya Inst. of Technol., Nagoya, Japan
fYear :
2011
fDate :
23-27 Jan. 2011
Firstpage :
432
Lastpage :
435
Abstract :
Silicon is susceptible to fatigue even under inert environment, although it has been believed not to be. This paper presents a brand-new image of the fatigue behavior of silicon obtained using the microtensile method. It is estimated that 25% of polysilicon specimens and 34% of single-crystal silicon will break in about 100 years in a nitrogen atmosphere at room temperature, when subjected to a fatigue loading of 100 kHz with a constant stress amplitude amounting to 75% of the scale parameter in the Weibull distribution of their static strength.
Keywords :
Weibull distribution; elemental semiconductors; fatigue; fatigue testing; fracture; loading; mechanical strength; nitrogen; semiconductor thin films; silicon; tensile testing; Ni; Si; Weibull distribution; breakage; fatigue loading; finite fatigue lifetime; frequency 100 kHz; inert environment; microtensile method; polysilicon specimen; single-crystal silicon; static strength; temperature 293 K to 298 K; Fatigue; Fitting; Humidity; Loading; Silicon; Stress; Weibull distribution;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
Conference_Location :
Cancun
ISSN :
1084-6999
Print_ISBN :
978-1-4244-9632-7
Type :
conf
DOI :
10.1109/MEMSYS.2011.5734454
Filename :
5734454
Link To Document :
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