Title :
High density plasma processing of p-Hg0.7Cd0.3Te
Author :
Park, Benjamin ; Musca, Charles ; Antoszewski, Jarek ; Dell, John ; Faraone, Lorenzo
Author_Institution :
Univ. of Western Australia, Crawley
Abstract :
Reactive ion etching of HgCdTe using H2/Ar-based gas chemistry is known to result in conductivity type conversion of exposed material and surface depletion of Hg. Secondary ion mass spectrometry has been used to investigate the compositional profile of HgCdTe material exposed to H2/CH4/Ar plasma in an inductively coupled plasma reactive ion etching tool, as a function of varying the plasma process pressure and temperature. The results of this profiling show that increasing the process pressure is related to an increase in the degree of Hg-depletion at the exposed surface. It has also been found that increasing the process pressure is associated with increased incorporation of C into the sample surface.
Keywords :
III-VI semiconductors; cadmium compounds; infrared detectors; mercury compounds; photodetectors; plasma materials processing; plasma pressure; plasma temperature; secondary ion mass spectroscopy; spectrochemical analysis; sputter etching; H2-Ar; Hg0.7Cd0.3Te; compositional profile; conductivity type conversion; gas chemistry; high density plasma processing; inductively coupled plasma reactive ion etching; infrared detectors; plasma process pressure; plasma process temperature; secondary ion mass spectrometry; surface Hg-depletion; Composite materials; Conducting materials; Conductivity; Etching; Mercury (metals); Plasma applications; Plasma chemistry; Plasma density; Plasma materials processing; Plasma temperature; HgCdTe; inductively coupled plasma reactive ion etching; plasma processing; secondary ion mass spectroscopy;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4244-0578-7
Electronic_ISBN :
978-1-4244-0578-7
DOI :
10.1109/COMMAD.2006.4429931
