Local stress analysis of single crystalline silicon resonator using micro Raman spectroscopy

Author

Taniyama, A. ; Hirai, Y. ; Sugano, K. ; Tabata, O. ; Ikehara, T. ; Tsuchiya, T.

Author_Institution

Kyoto Univ., Kyoto, Japan

fYear

2011

fDate

23-27 Jan. 2011

Firstpage

449

Lastpage

452

Abstract

This paper reports a method for analyzing local stress in resonating single-crystal silicon (SCS) microstructures of various crystal orientations using micro Raman spectroscopy. The notched support beams of fan-shaped in-plane resonators were used as specimens. The specimens have five different crystallographic orientations. The spectra at notch tips were calculated using the Raman spectrum of Si without stress and the stress distribution analyzed by finite element method (FEM). The measured spectra of all (100) and most of (110) specimens showed good agreement with the analyzed ones, which indicates the validity of this method.

Keywords

Raman spectra; crystal orientation; elemental semiconductors; finite element analysis; silicon; stress analysis; Si; crystal orientations; finite element method; local stress analysis; micro Raman spectroscopy; single crystalline silicon resonator; stress distribution; Finite element methods; Phonons; Raman scattering; Semiconductor device measurement; Stress measurement; Tensile stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on

Conference_Location

Cancun

ISSN

1084-6999

Print_ISBN

978-1-4244-9632-7

Type

conf

DOI

10.1109/MEMSYS.2011.5734458

Filename

5734458