Dark current modelling of midwave infrared HgCdTe gated photodiodes

Author

Westerhout, R.J. ; Musca, C.A. ; Antoszewski, J. ; Dell, J.M. ; Faraone, L.

Author_Institution

Univ. of Western Australia, Crawley

fYear

2006

fDate

6-8 Dec. 2006

Firstpage

294

Lastpage

297

Abstract

HgCdTe midwave-infrared gated photodiodes were studied both experimentally and theoretically to determine the dark current mechanisms present under different surface conditions. By modifying HgCdTe photodiode equations to account for surface band-bending we are able obtain a first-order approximation to the behaviour of these gated photodiodes. A good fit to the data has been obtained for band-to-band tunnelling and surface generation-recombination current, but not for trap-assisted-tunnelling (TAT) current. This is attributed to the exclusion of interface states in the model, the complicated TAT behaviour, as well as two-dimensional effects.

Keywords

cadmium compounds; infrared spectra; mercury compounds; photodiodes; tunnelling; HgCdTe; band-to-band tunnelling; dark current modelling; first-order approximation; mercury cadmium telluride; midwave infrared gated photodiodes; surface band-bending; surface generation-recombination current; Dark current; Diodes; Equations; Immune system; Infrared spectra; Noise generators; Photodiodes; Plasma temperature; Surface fitting; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4244-0578-7

Electronic_ISBN

978-1-4244-0578-7

Type

conf

DOI

10.1109/COMMAD.2006.4429940

Filename

4429940