DocumentCode :
2767428
Title :
Polysilicon-filled carbon nanotube grass structural material for micromechanical resonators
Author :
Li, Wei-Chang ; Jiang, Yingqi ; Schneider, Robert A. ; Barrow, Henry G. ; Lin, Liwei ; Nguyen, Clark T -C
Author_Institution :
Dept. of EECS, Univ. of California, Berkeley, CA, USA
fYear :
2011
fDate :
23-27 Jan. 2011
Firstpage :
477
Lastpage :
480
Abstract :
Folded-beam capacitive-comb-driven micromechanical resonators constructed of polysilicon-filled carbon nanotube (CNT) grass structural material have been characterized via electrical measurement to extract numbers for mechanical properties. The process used here is based on that first demonstrated in, but improved by introduction of a guiding oxide mold and post-fabrication in situ localized annealing. Specifically, the measured frequency response for a 28.658-kHz in situ localized annealed version yields a Q of 3,230 twice as high as that of an un-annealed one; and an acoustic velocity of 9,042m/s slightly higher than the 8,024m/s of polysilicon, and inching towards the ~12,000m/s typical of SiC. This material not only facilitates fabrication of high aspect-ratio microstructures, but also shows potential (via its silicon-carbon makeup) for approximating SiC, for which theory predicts frequency and Q advantages over silicon for resonant devices.
Keywords :
annealing; carbon nanotubes; micromechanical resonators; silicon compounds; wide band gap semiconductors; C; SiC; acoustic velocity; electrical measurement; folded-beam capacitive-comb; frequency 28.658 kHz; guiding oxide mold; localized annealing; mechanical properties; micromechanical resonators; microstructures; polysilicon-filled carbon nanotube grass; structural material; Acoustic measurements; Acoustics; Annealing; Frequency measurement; Silicon; Silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
Conference_Location :
Cancun
ISSN :
1084-6999
Print_ISBN :
978-1-4244-9632-7
Type :
conf
DOI :
10.1109/MEMSYS.2011.5734465
Filename :
5734465
Link To Document :
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