Title :
Tunneling effects on temperature-dependent photocurrent intensity in InxGa1-xAs multiple-quantum-well diodes
Author :
Kawasaki, K. ; Tanigawa, K. ; Fujiwara, Koji
Author_Institution :
Sendai Nat. Coll. of Technol., Sendai
Abstract :
Temperature dependence of the photocurrent (PC) intensity has been experimentally investigated as a function of reverse bias in high quality In0.1Ga0.9As/A0.15Ga0.85As multiple quantum wells (MQW) in a p-i-n diode configuration. PC features show unusual behaviors at low temperatures, especially at 15 K, such as (1) the PC intensity increase with the electric field under low field conditions at 15 K and (2) a reduction up to 60 K and a rise above 60 K, while the PC intensity under high field conditions decreases with temperature. These unusual PC features under low field conditions at low temperatures are explained by considering exciton ionization, the thermal population and the tunneling probability.
Keywords :
III-V semiconductors; excitons; gallium arsenide; indium compounds; p-i-n diodes; photoconductivity; semiconductor quantum wells; InGaAs; exciton ionization; multiple-quantum-well diodes; p-i-n diode configuration; reverse bias; temperature-dependent photocurrent intensity; thermal population; tunneling effects; tunneling probability; Absorption; Electrodes; Excitons; Optical sensors; P-i-n diodes; Photoconductivity; Quantum well devices; Radiative recombination; Temperature; Tunneling; multiple quantum well; photocurrent; tunneling;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on
Conference_Location :
Perth, WA
Print_ISBN :
978-1-4244-0578-7
Electronic_ISBN :
978-1-4244-0578-7
DOI :
10.1109/COMMAD.2006.4429942
