Heteroepitaxy and Selective Epitaxy for Discrete and Integrated Devices

Author

Lourdudoss, S. ; Olsson, F. ; Barrios, C.A. ; Hakkarainen, T. ; Berrier, A. ; Anand, S. ; Aubert, A. ; Berggren, J. ; Broeke, R.G. ; Cao, J. ; Chubun, N. ; Seo, S.-W. ; Baek, J.-H. ; Aihara, K. ; Pham, Anh-Vu ; Yoo, S. J Ben ; Avella, M. ; Jimenez, J.

Author_Institution

R. Inst. of Technol., Kista

fYear

2006

fDate

6-8 Dec. 2006

Firstpage

309

Lastpage

311

Abstract

We present first results on heteroepitaxy of InP on silicon on insulator (SOI). We also demonstrate InP nanopillar fabrication by means of selective epitaxy. Selective epitaxy is also exploited to fabricate advanced photonic integrated devices for optical code division multiplex access (OCDMA) networking applications.

Keywords

III-V semiconductors; code division multiplexing; indium compounds; integrated optics; nanotechnology; silicon-on-insulator; InP; Si; heteroepitaxy; nanopillar fabrication; networking; optical code division multiplex access; photonic integrated device; selective epitaxy; silicon on insulator; Arrayed waveguide gratings; Epitaxial growth; Indium phosphide; Optical arrays; Optical devices; Optical surface waves; Optical waveguides; Phased arrays; Silicon on insulator technology; Substrates; Heteroepitaxy; Hydride vapour phase epitaxy; OCDMA devices; nanopillars; selective epitaxy;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on

Conference_Location

Perth, WA

Print_ISBN

978-1-4244-0578-7

Electronic_ISBN

978-1-4244-0578-7

Type

conf

DOI

10.1109/COMMAD.2006.4429944

Filename

4429944