Abstract :
The following topics are dealt with: FinFET; RRAM; high mobility channel device; NAND flash memory; PCRAM; 3D integration; integrated circuit reliability; integrated circuit stability; ultra thin body FDSOI; DRAM; CMOS sensor; RTN; and MRAM.
Keywords :
CMOS integrated circuits; MOSFET; VLSI; circuit stability; flash memories; integrated circuit reliability; random-access storage; sensors; silicon-on-insulator; three-dimensional integrated circuits; 3D integration; CMOS sensor; DRAM; FinFET; MRAM; NAND flash memory; PCRAM; RRAM; RTN; VLSI; high mobility channel device; integrated circuit reliability; integrated circuit stability; ultra thin body FDSOI;
Conference_Titel :
VLSI Technology (VLSIT), 2011 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-9949-6
