Temperature characteristics analysis of InGaP/InGaAs/Ge triple-junction solar cell under concentrated light using spice diode model

Temperature characteristic analysis of the triple-junction solar cell was carried out using analysis function of the simulation program with integrated circuit emphasis (SPICE) under concentration conditions. Using the dark I-V characteristics of each single-junction solar cell (InGaP, InGaAs, Ge solar cells), the fitting of I-V curve and extraction of diode parameters were carried out. X_ti of each solar cell was derived from the temperature dependence on the band gap. Extracted diode parameters and X_ti were used in the equivalent circuit for triple-junction solar cell, and the open circuit voltages (V_oc) at various temperatures under the various concentration ratios were calculated. Concentrated ratios evaluated in this study were 1, 7 and 14 suns, respectively. The calculated value corresponded to the measured value. We analysed the temperature characteristics of triple-junction solar cells using SPICE diode model. Measured and calculated I-V characteristics for triple-junction solar cells agreed well at various temperatures under low concentration ratios. It is considered that this method can be applied to the output estimation of single-junction and multi-junction solar cells under the various temperatures and concentration ratios.