• DocumentCode
    2767906
  • Title

    In-situ XRD investigation on phase transition of CdTe thin films during a CdCl2 heat treatment

  • Author

    Kim, MaengJun ; Lee, SungHo ; Sohn, SangHo

  • Author_Institution
    Dept. of Phys., KyungPook Nat. Univ., Daegu, South Korea
  • fYear
    2010
  • fDate
    20-25 June 2010
  • Abstract
    In order to investigate the effect of CdCl2 heat treatment on the physical properties of the CdTe thin films grown by a sputtering method, the CdTe thin films were coated with CdCl2. The recrystallisation, grain growth and randomization were investigated by monitoring the phase transition of CdCl2 heat treated CdTe specimens during temperature ramp annealed using in situ high-temperature X-ray diffraction. The result shows that the recrystallisation of the CdTe(111) texture and other textures does not occur simultaneously but sequencially. The XRD data shows there was no overlapped temperature region for recrystallisation between (111) and other textures.
  • Keywords
    II-VI semiconductors; X-ray diffraction; annealing; cadmium compounds; grain growth; recrystallisation; semiconductor thin films; solid-state phase transformations; sputter deposition; CdCl2; CdTe; grain growth; heat treatment; in-situ XRD investigation; phase transition; physical properties; recrystallisation; sputtering method; temperature ramp annealing; thin films;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
  • Conference_Location
    Honolulu, HI
  • ISSN
    0160-8371
  • Print_ISBN
    978-1-4244-5890-5
  • Type

    conf

  • DOI
    10.1109/PVSC.2010.5616175
  • Filename
    5616175