DocumentCode
2767906
Title
In-situ XRD investigation on phase transition of CdTe thin films during a CdCl2 heat treatment
Author
Kim, MaengJun ; Lee, SungHo ; Sohn, SangHo
Author_Institution
Dept. of Phys., KyungPook Nat. Univ., Daegu, South Korea
fYear
2010
fDate
20-25 June 2010
Abstract
In order to investigate the effect of CdCl2 heat treatment on the physical properties of the CdTe thin films grown by a sputtering method, the CdTe thin films were coated with CdCl2. The recrystallisation, grain growth and randomization were investigated by monitoring the phase transition of CdCl2 heat treated CdTe specimens during temperature ramp annealed using in situ high-temperature X-ray diffraction. The result shows that the recrystallisation of the CdTe(111) texture and other textures does not occur simultaneously but sequencially. The XRD data shows there was no overlapped temperature region for recrystallisation between (111) and other textures.
Keywords
II-VI semiconductors; X-ray diffraction; annealing; cadmium compounds; grain growth; recrystallisation; semiconductor thin films; solid-state phase transformations; sputter deposition; CdCl2; CdTe; grain growth; heat treatment; in-situ XRD investigation; phase transition; physical properties; recrystallisation; sputtering method; temperature ramp annealing; thin films;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
Conference_Location
Honolulu, HI
ISSN
0160-8371
Print_ISBN
978-1-4244-5890-5
Type
conf
DOI
10.1109/PVSC.2010.5616175
Filename
5616175
Link To Document