Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers

Author

Faucher, M. ; Cordier, Y. ; Semond, F. ; Brandli, V. ; Grimbert, B. ; Amar, A.B. ; Werquin, M. ; Boyaval, C. ; Gaquière, C. ; Théron, D. ; Buchaillot, L.

Author_Institution

CNRS, IEMN, Villeneuve d´´Ascq, France

fYear

2011

fDate

23-27 Jan. 2011

Firstpage

581

Lastpage

584

Abstract

The properties of a new class of electromechanical resonators based on GaN are presented. By using the two-dimensional electron gas (2-DEG) present at the AlGaN/GaN interface and the piezoelectric properties of this heterostructure, we use the R-HEMT (Resonant High Electron Mobility Transistor) as an active piezoelectric transducer up to 5MHz. In addition to the amplification effect of piezoelectric detection, we show that the active piezoelectric transduction has a strong dependence with the channel mobility that is controlled by a top gate. This allows to envision highly tunable sensors with co-integrated HEMT electronics.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; micromechanical resonators; piezoelectric transducers; two-dimensional electron gas; wide band gap semiconductors; 2-DEG; AlGaN-GaN; MEMS resonators; R-HEMT; active piezoelectric transducer; channel mobility; electromechanical resonators; frequency 5 MHz; gallium nitride; integrated HEMT electronics; piezo-amplified transducers; piezoelectric detection; piezoelectric properties; resonant high electron mobility transistor; two-dimensional electron gas; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; Micromechanical devices; Optical resonators; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on

Conference_Location

Cancun

ISSN

1084-6999

Print_ISBN

978-1-4244-9632-7

Type

conf

DOI

10.1109/MEMSYS.2011.5734491

Filename

5734491