Title :
Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers
Author :
Faucher, M. ; Cordier, Y. ; Semond, F. ; Brandli, V. ; Grimbert, B. ; Amar, A.B. ; Werquin, M. ; Boyaval, C. ; Gaquière, C. ; Théron, D. ; Buchaillot, L.
Author_Institution :
CNRS, IEMN, Villeneuve d´´Ascq, France
Abstract :
The properties of a new class of electromechanical resonators based on GaN are presented. By using the two-dimensional electron gas (2-DEG) present at the AlGaN/GaN interface and the piezoelectric properties of this heterostructure, we use the R-HEMT (Resonant High Electron Mobility Transistor) as an active piezoelectric transducer up to 5MHz. In addition to the amplification effect of piezoelectric detection, we show that the active piezoelectric transduction has a strong dependence with the channel mobility that is controlled by a top gate. This allows to envision highly tunable sensors with co-integrated HEMT electronics.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; micromechanical resonators; piezoelectric transducers; two-dimensional electron gas; wide band gap semiconductors; 2-DEG; AlGaN-GaN; MEMS resonators; R-HEMT; active piezoelectric transducer; channel mobility; electromechanical resonators; frequency 5 MHz; gallium nitride; integrated HEMT electronics; piezo-amplified transducers; piezoelectric detection; piezoelectric properties; resonant high electron mobility transistor; two-dimensional electron gas; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; Micromechanical devices; Optical resonators; Silicon;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
Conference_Location :
Cancun
Print_ISBN :
978-1-4244-9632-7
DOI :
10.1109/MEMSYS.2011.5734491
