• DocumentCode
    2768139
  • Title

    Reliability concerns for HfO2/Si (and (ZrO2/Si) systems: interface and dielectric traps

  • Author

    Kang, Andrew Y. ; Lenahan, Patrick M. ; Vonley, J.F. ; Ono, Yoshi

  • Author_Institution
    Pennsylvania State Univ., USA
  • fYear
    2003
  • fDate
    20-23 Oct. 2003
  • Firstpage
    24
  • Lastpage
    27
  • Abstract
    We report on electron photo-injection results in HfO2 films using capacitance vs. voltage (CV) and electron spin resonance measurements. CV measurements indicate presence of pre-existing large capture cross section electron traps. Electron spin resonance measurements indicate trapped electrons in the form of O-2 superoxide ions. Another center, likely a Hf+3 center, is also observed.
  • Keywords
    electron traps; hafnium compounds; interface states; paramagnetic resonance; semiconductor device reliability; silicon; zirconium compounds; CV measurements; HfO2-Si; ZrO2-Si; dielectric traps; electron photo-injection; electron spin resonance measurements; interface traps; reliability; superoxide ions; Annealing; Capacitance; Dielectric measurements; Electrodes; Electron traps; Hafnium oxide; Paramagnetic resonance; Semiconductor films; Spectroscopy; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Reliability Workshop Final Report, 2003 IEEE International
  • Print_ISBN
    0-7803-8157-2
  • Type

    conf

  • DOI
    10.1109/IRWS.2003.1283294
  • Filename
    1283294
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2768139