DocumentCode :
2768139
Title :
Reliability concerns for HfO2/Si (and (ZrO2/Si) systems: interface and dielectric traps
Author :
Kang, Andrew Y. ; Lenahan, Patrick M. ; Vonley, J.F. ; Ono, Yoshi
Author_Institution :
Pennsylvania State Univ., USA
fYear :
2003
fDate :
20-23 Oct. 2003
Firstpage :
24
Lastpage :
27
Abstract :
We report on electron photo-injection results in HfO2 films using capacitance vs. voltage (CV) and electron spin resonance measurements. CV measurements indicate presence of pre-existing large capture cross section electron traps. Electron spin resonance measurements indicate trapped electrons in the form of O-2 superoxide ions. Another center, likely a Hf+3 center, is also observed.
Keywords :
electron traps; hafnium compounds; interface states; paramagnetic resonance; semiconductor device reliability; silicon; zirconium compounds; CV measurements; HfO2-Si; ZrO2-Si; dielectric traps; electron photo-injection; electron spin resonance measurements; interface traps; reliability; superoxide ions; Annealing; Capacitance; Dielectric measurements; Electrodes; Electron traps; Hafnium oxide; Paramagnetic resonance; Semiconductor films; Spectroscopy; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop Final Report, 2003 IEEE International
Print_ISBN :
0-7803-8157-2
Type :
conf
DOI :
10.1109/IRWS.2003.1283294
Filename :
1283294
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2768139
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