DocumentCode
2768253
Title
Si acoustic delay lines and the effect of current on accoustic wave attenuation and speed
Author
Chen, Lingyao ; Tabib-Azar, Massood
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Utah, Salt Lake City, UT, USA
fYear
2011
fDate
23-27 Jan. 2011
Firstpage
633
Lastpage
635
Abstract
We studied the effect of excess carriers, temperature and current on acoustic waves in silicon delay lines. Heat and excess carriers reduce the acoustic velocity by respectively reducing the Young´s modulus and through the deformation potential. Electrical current, on the other hand, can increase the acoustic velocity depending on their drift velocity. In addition to current, acoustic waves can also be controlled through field effect and modulation of depletion width in periodic p-n junctions embedded in the delay line.
Keywords
Young´s modulus; acoustic wave absorption; acoustic wave velocity; acoustoelectric effects; deformation; elemental semiconductors; p-n junctions; silicon; surface acoustic wave delay lines; Young´s modulus; acoustic velocity; acoustic wave attenuation; acoustic wave speed; current effect; deformation potential; p-n junctions; silicon acoustic delay lines; Acoustic waves; Attenuation; Delay lines; Electrodes; Silicon; Slabs;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
Conference_Location
Cancun
ISSN
1084-6999
Print_ISBN
978-1-4244-9632-7
Type
conf
DOI
10.1109/MEMSYS.2011.5734504
Filename
5734504
Link To Document