• DocumentCode
    2768253
  • Title

    Si acoustic delay lines and the effect of current on accoustic wave attenuation and speed

  • Author

    Chen, Lingyao ; Tabib-Azar, Massood

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Utah, Salt Lake City, UT, USA
  • fYear
    2011
  • fDate
    23-27 Jan. 2011
  • Firstpage
    633
  • Lastpage
    635
  • Abstract
    We studied the effect of excess carriers, temperature and current on acoustic waves in silicon delay lines. Heat and excess carriers reduce the acoustic velocity by respectively reducing the Young´s modulus and through the deformation potential. Electrical current, on the other hand, can increase the acoustic velocity depending on their drift velocity. In addition to current, acoustic waves can also be controlled through field effect and modulation of depletion width in periodic p-n junctions embedded in the delay line.
  • Keywords
    Young´s modulus; acoustic wave absorption; acoustic wave velocity; acoustoelectric effects; deformation; elemental semiconductors; p-n junctions; silicon; surface acoustic wave delay lines; Young´s modulus; acoustic velocity; acoustic wave attenuation; acoustic wave speed; current effect; deformation potential; p-n junctions; silicon acoustic delay lines; Acoustic waves; Attenuation; Delay lines; Electrodes; Silicon; Slabs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
  • Conference_Location
    Cancun
  • ISSN
    1084-6999
  • Print_ISBN
    978-1-4244-9632-7
  • Type

    conf

  • DOI
    10.1109/MEMSYS.2011.5734504
  • Filename
    5734504