Title :
Using time-dependent reliability fallout as a function of yield to optimize burn-in time for a 130 nm SRAM device
Author :
Forbes, Keith R. ; Arguello, Noel
Author_Institution :
Motorola Semicond. Product Sector, Austin, TX, USA
Abstract :
Statistical model is presented to predict the burn-in necessary to ensure a specified reliability target over the product lifetime. Parameters for this model are estimated from interval lifetest data. A relationship between yield and reliability was incorporated with thermal and voltage acceleration of time-to-failure. Parameters are fitted simultaneously using the maximum likelihood estimation (MLE) methodology. The confidence interval necessary to asses customer risks are constructed using assymptotic theory.
Keywords :
failure analysis; integrated circuit modelling; integrated circuit reliability; reliability theory; CMOS reliability; MLE methodology; SRAM device; burn-in time optimization; lifetest data; product lifetime; statistical model; thermal acceleration; time-dependent reliability fallout; time-to-failure; voltage acceleration; yield function; Acceleration; Costs; Failure analysis; Manufacturing; Maximum likelihood estimation; Probes; Production; Random access memory; Semiconductor device modeling; Voltage;
Conference_Titel :
Integrated Reliability Workshop Final Report, 2003 IEEE International
Print_ISBN :
0-7803-8157-2
DOI :
10.1109/IRWS.2003.1283302
