Title :
A MEMS-SOI 3D-magnetic field sensor
Author :
Estrada, Horacio V.
Author_Institution :
Div. de Metrologia Electr., Centro Nac. de Metrologia, Querétaro, Mexico
Abstract :
A true-3D Hall sensor is reported which is fabricated based on MEMS micromachining of SOI-wafers which includes a flexible polyimide carrier so as to enable the development of a geometry-adaptable sensor when the three Hall-probes are positioned to form an orthogonally-oriented array on three faces of a non-magnetic material cube, yielding a true 3D-Hall sensor. Since the sensitivity of Hall-probes is defined by the doping level of the semiconductor material and the thickness of the Hall element, the sensitivity of each element is about the same (~100V/AT) when they are manufactured adjacent to each other on the silicon wafer where both, the doping level and the wafer thickness are near-identical.
Keywords :
magnetic field measurement; magnetic sensors; micromachining; micromechanical devices; semiconductor doping; silicon-on-insulator; 3D Hall sensor; 3D magnetic field sensor; MEMS micromachining; MEMS-SOI; SOI-wafers; doping level; flexible polyimide carrier; nonmagnetic material cube; semiconductor material; Arrays; Magnetic field measurement; Magnetic fields; Polyimides; Probes; Sensitivity; Voltage measurement;
Conference_Titel :
Micro Electro Mechanical Systems (MEMS), 2011 IEEE 24th International Conference on
Conference_Location :
Cancun
Print_ISBN :
978-1-4244-9632-7
Electronic_ISBN :
1084-6999
DOI :
10.1109/MEMSYS.2011.5734512